SIA431DJ-T1-GE3

$0.64

Description：MOSFET P-CH 20V 12A PPAK SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e22dffef6959 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA431DJ-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 12A PPAK SC70-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA431DJ-T1-GE3

Description：MOSFET P-CH 20V 12A PPAK SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6
Package / Case：PowerPAK® SC-70-6

Single FETs, MOSFETs datasheet and documents for SIA431DJ-T1-GE3

SIA431DJ-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiA431DJ-T1-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a PowerPAK SC-70-6L surface-mount package with a drain-source voltage rating of -20 V and a continuous drain current of -12 A at TC = 25 °C. The device exhibits a maximum on-resistance of 0.025 Ω at VGS = -4.5 V, with typical gate charge of 24 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for low on-resistance
Thermally enhanced PowerPAK SC-70 package with small footprint
100% Rg tested for reliability

Single FETs, MOSFETs Applications

Load switch applications
PA switch circuits
Battery switch for portable devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., -T1-GE3) against the manufacturer's datasheet to confirm lead-free and halogen-free compliance status. Ensure that the PowerPAK SC-70 package dimensions match the target PCB layout requirements. Confirm thermal management strategies align with the specified junction-to-ambient resistance values under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-channel solution with low on-resistance in portable electronics. Evaluate the -20 V drain-source voltage limit against circuit peak voltages. Consider the single-channel configuration and the specific gate threshold characteristics when designing drive circuits for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiA series of P-channel MOSFETs. It utilizes the TrenchFET generation technology to achieve improved performance metrics within the PowerPAK SC-70 form factor. The device is designed for surface-mount assembly, offering a balance between electrical performance and physical size constraints common in modern consumer electronics.