SIHB35N60EF-GE3

Single FETs, MOSFETs Overview

The SIHB35N60EF-GE3 is a Vishay Siliconix N-channel enhancement mode power MOSFET from the EF Series, housed in a D2PAK (TO-263) package. It features a drain-source voltage of 600 V and a continuous drain current of 32 A at 25 °C case temperature. The typical on-state resistance is 84 mΩ at VGS = 10 V, with a maximum of 97 mΩ. Total gate charge reaches 134 nC at VDS = 480 V. Maximum power dissipation is 250 W, operating within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Features an ultra-low gate charge and low figure-of-merit for reduced switching and conduction losses
• Includes a fast body diode rated for avalanche energy applications
• Offers a specific on-resistance reduction of 25 percent compared to previous generations

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official documentation to confirm lead-free status and packaging format. The standard GE3 suffix indicates Pb-free and halogen-free compliance. Confirm whether tape-and-reel or tube packaging is required for your assembly process, as alternative reel options exist within the same electrical family.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and low thermal impedance are critical. The EF series provides optimized capacitance characteristics suitable for high-frequency operation. Ensure adequate heatsinking to maintain the case temperature within limits for the desired continuous current rating.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix EF Series, designed specifically for high-efficiency power conversion. It utilizes advanced silicon technology to achieve lower on-resistance and improved switching performance compared to standard MOSFETs in the same voltage class.

Single FETs, MOSFETs Replacement Considerations

Check the SiHB35N60E-GE3 for similar specifications in the non-EF series. Verify pinout compatibility and thermal resistance values before substituting any other TO-263 packaged MOSFETs.