SIHG018N60E-GE3

$15.13

Description：MOSFET N-CH 600V 99A TO247AC
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:b441afb4a068 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHG018N60E-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 99A TO247AC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHG018N60E-GE3

Description：MOSFET N-CH 600V 99A TO247AC
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：23mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：228 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：7612 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：524W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SIHG018N60E-GE3

SIHG018N60E-GE3

Single FETs, MOSFETs Overview

The SiHG018N60E-GE3 is a Vishay Siliconix N-channel Power MOSFET utilizing 4th generation E series technology. It features a TO-247AC package with a drain-source voltage (VDS) of 600 V and a gate-source voltage (VGS) rating of ±30 V. The device exhibits a typical on-state resistance (RDS(on)) of 0.021 Ω at 25 °C and supports a continuous drain current (ID) of 99 A at TC = 25 °C. Key dynamic parameters include a maximum total gate charge (Qg) of 228 nC, an avalanche energy rating (EAS) of 902 mJ, and a maximum power dissipation (PD) of 524 W.

Single FETs, MOSFETs Feature Summary

Incorporates 4th generation E series technology to achieve low figure-of-merit (FOM) Ron x Qg.
Features reduced effective capacitance (Co(er)) for optimized switching performance.
Rated for unclamped inductive switching (UIS) avalanche energy.
Designed to minimize both switching and conduction losses.

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
High-intensity discharge (HID) lighting
Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Confirm that the TO-247AC package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions accommodate the specified maximum junction temperature range of -55 °C to +150 °C under intended load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency is required due to its low RDS(on) and optimized gate charge characteristics. The robust avalanche rating makes it suitable for inductive loads where transient energy absorption is necessary. Verify that the 600 V breakdown voltage provides adequate margin for the specific circuit operating voltages.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup, which focuses on advanced trench gate technology. The SiHG018N60E variant specifically targets high-power applications requiring superior thermal handling and low conduction losses within the standard TO-247AC through-hole form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified cross-reference part numbers. Do not substitute based solely on matching electrical ratings without verifying pinout compatibility and thermal resistance specifications.