SIHG21N80AE-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG21N80AE-GE3 is a single N-channel Power MOSFET from the E Series, utilizing TrenchFET technology in a TO-247AC package. It features an 800 V drain-source voltage rating and a maximum continuous drain current of 17.4 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.205 Ω at VGS = 10 V and ID = 11 A. Key dynamic parameters include a maximum total gate charge of 72 nC, a turn-on delay time of 42 ns, and a fall time of 114 ns under specified test conditions.

Single FETs, MOSFETs Feature Summary

• TrenchFET technology designed to achieve low figure-of-merit (Ron x Qg) for reduced switching and conduction losses
• Rated for repetitive unclamped inductive switching (UIS) avalanche energy
• Optimized for low effective capacitance (Co(er))

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking with official datasheet specifications. Confirm compliance with RoHS and REACH directives as indicated in the ordering information. Ensure that thermal management designs account for the specific junction-to-case thermal resistance ratings provided in the documentation to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and efficient switching performance. The TO-247AC package provides suitable thermal dissipation characteristics for through-hole mounting. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds and minimize driver losses within the system design constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series of Power MOSFETs, which are engineered using advanced TrenchFET technology. The series focuses on optimizing the balance between on-resistance and gate charge to enhance overall efficiency in power conversion systems. The GE3 suffix indicates lead-free and halogen-free construction compliant with environmental standards.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 800 V rating, TO-247AC package, and comparable electrical characteristics such as RDS(on) and Qg. Verify pinout compatibility and thermal resistance values before substitution.