SIHP30N60AEL-GE3

$2.29

Description：MOSFET N-CH 600V 28A TO220AB
Series：EL
Mfr：Vishay Siliconix
Package：Tube

SKU:5ae728255b62 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHP30N60AEL-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 28A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHP30N60AEL-GE3

Description：MOSFET N-CH 600V 28A TO220AB
Series：EL
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：120mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2565 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SIHP30N60AEL-GE3

SIHP30N60AEL-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiHP30N60AEL-GE3 is an N-channel enhancement mode MOSFET from the EL Series, housed in a TO-220AB package. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 28 A at 25 °C case temperature. The typical on-state resistance (RDS(on)) is 105 mΩ at VGS = 10 V and ID = 15 A. Maximum total gate charge (Qg) is specified at 120 nC. The device supports a maximum power dissipation of 250 W and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for low figure-of-merit (FOM) combining Ron and Qg to reduce switching and conduction losses
Features ultra-low input capacitance (Ciss) and reduced gate charge for improved efficiency
Rated for unclamped inductive switching (UIS) avalanche energy applications

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction (PFC) circuits
High-intensity discharge (HID) lighting systems
Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix -GE3 to confirm lead-free and halogen-free compliance status. Ensure the ordering code matches the specific EL Series variant required for your design. Cross-reference the document revision date against the manufacturer's official database to confirm the latest electrical specifications and thermal ratings are applied.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and robust avalanche capability are required. The TO-220AB package facilitates through-hole mounting with effective heat sinking. Evaluate the thermal impedance characteristics against your system's ambient conditions to ensure the junction temperature remains within safe operating limits during continuous operation.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix EL Series, which focuses on optimizing the trade-off between on-resistance and gate charge. It serves as a high-performance discrete power switch designed for general-purpose industrial and commercial power conversion applications requiring reliable N-channel switching at 600 V levels.