SIR580DP-T1-RE3

$1.84

Description：N-CHANNEL 80-V (D-S) MOSFET
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4bd743f2b049 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR580DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 80-V (D-S) MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR580DP-T1-RE3

Description：N-CHANNEL 80-V (D-S) MOSFET
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：35.8A (Ta), 146A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4100 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：6.25W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR580DP-T1-RE3

SIR580DP-T1-RE3

Single FETs, MOSFETs Overview

The SiR580DP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen V technology. It features an 80 V drain-source voltage rating and a maximum on-state resistance of 2.7 mΩ at VGS = 10 V. The device supports a continuous drain current of 146 A at TC = 25 °C. Typical gate charge is 37.7 nC at VGS = 7.5 V. It is housed in a leadless PowerPAK SO-8 package with exposed copper terminals for optimized thermal performance.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen V power MOSFET architecture
Optimized low RDS(on) x Qg figure-of-merit
Tuned for lowest RDS(on) x Qoss figure-of-merit
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converters
OR-ing and hot swap switch
Power supplies
Motor drive control
Battery management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm manufacturing origin and compliance status. The -RE3 suffix indicates lead-free and halogen-free packaging, while -UE3 denotes BLR and IOL variants. Confirm that the component matches the required application environment and thermal constraints before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and fast switching are required in compact designs. The low gate charge and optimized figures-of-merit reduce switching losses. Ensure adequate heatsinking or PCB copper area is available to manage thermal dissipation within the specified junction temperature limits during operation.

Single FETs, MOSFETs Part Context

This part belongs to the SIR series of single N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8 package, which provides a small footprint with enhanced thermal capabilities compared to traditional packages. The series is designed for high-current applications requiring robust performance.