SIR846BDP-T1-RE3

Single FETs, MOSFETs Overview

The SiR846BDP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen IV technology, housed in a single PowerPAK SO-8 package. It features a drain-source voltage of 100 V and a continuous drain current of 65.8 A at TC = 25 °C. The maximum on-state resistance is 8 mΩ at VGS = 10 V and 9 mΩ at VGS = 7.5 V. Typical gate charge is 26.5 nC at VGS = 7.5 V. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 83.3 W at TC = 25 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen IV architecture optimized for low RDS(on) x Qg figure-of-merit
• Engineered for the lowest RDS(on) x Qoss figure-of-merit
• 100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

• Synchronous rectification
• Primary side switch
• DC/DC converters
• Power supplies
• Motor drive control

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the ordering code SiR846BDP-T1-RE3 against official Vishay documentation. Confirm compliance with RoHS and halogen-free material standards as specified in the datasheet. Ensure that the PowerPAK SO-8 leadless package handling procedures are followed during assembly, noting that manual soldering with an iron is not recommended.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency in low-voltage environments due to its optimized RDS(on) x Qoss figure-of-merit. The 100 V rating and 65.8 A current capability suit robust power conversion designs. Verify thermal management requirements against the 1.2 °C/W junction-to-case thermal resistance to ensure operation within the -55 °C to +150 °C junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the SiR series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8 surface-mount package, designed for high-density PCB layouts. The device incorporates TrenchFET technology to achieve superior performance metrics compared to standard planar MOSFETs, specifically targeting reduced switching losses and conduction losses in modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100 V rating, PowerPAK SO-8 package, and comparable RDS(on) and Qg specifications. Verify pinout compatibility and thermal characteristics before substitution.