SISS5112DN-T1-GE3

Single FETs, MOSFETs Overview

The SiSS5112DN is a Vishay Siliconix N-Channel MOSFET featuring TrenchFET Gen V technology. It offers a drain-source voltage of 100 V and a maximum on-resistance of 0.0149 Ω at VGS = 10 V. The device supports a continuous drain current of 40.7 A at TC = 25 °C. Typical gate charge is 8 nC at VGS = 7.5 V. It utilizes a PowerPAK 1212-8S leadless package with a junction-to-case thermal resistance of 1.9 °C/W typical.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen V power MOSFET architecture
• Optimized for low RDS(on) x Qg figure-of-merit
• Tuned for lowest RDS(on) x Qoss figure-of-merit
• 100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

• Synchronous rectification
• Primary side switch
• DC/DC converters
• Power supplies
• Motor drive control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix -T1-GE3 to confirm lead-free and halogen-free compliance status as defined by Vishay material categorization standards. Ensure the PowerPAK 1212-8S package dimensions match your PCB footprint requirements, noting the exposed copper terminals require appropriate soldering profiles. Confirm that the application environment stays within the specified operating junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency in compact spaces due to its low thermal resistance and small PowerPAK 1212-8S footprint. Consider the 100 V rating and 40.7 A current capability for synchronous rectification or DC/DC converter designs. Evaluate the optimized figures-of-merit for switching performance needs. Validate thermal management strategies against the junction-to-ambient resistance values provided in the datasheet for your specific board layout.

Single FETs, MOSFETs Part Context

This N-Channel MOSFET belongs to Vishay's TrenchFET Gen V family, designed for high-efficiency power switching. The PowerPAK 1212-8S package provides a compact solution suitable for space-constrained electronics. The device integrates advanced trench gate technology to minimize conduction and switching losses, making it suitable for modern power supply architectures requiring high power density.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified cross-reference part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings. Verify that any substitute component meets the specific RDS(on), Qg, and thermal performance requirements of the original design.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the SiSS5112DN?

The maximum operating junction temperature is +150 °C.

Is the SiSS5112DN suitable for unclamped inductive switching applications?

Yes, the datasheet confirms that 100% of units are tested for unclamped inductive switching (UIS).