SN7002NH6327XTSA2

Single FETs, MOSFETs Overview

The SN7002NH6327XTSA2 is an N-channel enhancement mode MOSFET from the SIPMOS series, housed in a surface-mount PG-SOT-23 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 0.2 A at 25°C. The device has a typical on-state resistance of 2.5 Ω at VGS=10V and 3.9 Ω at VGS=4.5V. Total gate charge is typically 1 nC. It operates within a temperature range of -55°C to +150°C and includes an integrated reverse diode with a forward voltage of 0.83 V.

Single FETs, MOSFETs Feature Summary

• Enhancement mode logic level operation for direct interface with standard logic circuits
• High dv/dt rating capability up to 6 kV/µs for robust switching performance
• Qualified according to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

• Automotive electronic control units
• General-purpose low-power switching applications
• Logic level signal translation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327 corresponds to the required tape and reel quantity of 3000 pieces per reel. Confirm that the component meets halogen-free requirements as defined by IEC61249-2-21. Ensure the application environment remains within the specified thermal limits to maintain the rated power dissipation of 0.36 W.

Single FETs, MOSFETs Selection Notes

Select this component when a small-signal N-channel MOSFET with high dv/dt tolerance is required. The low gate charge facilitates efficient driving in logic-level circuits. Consider the thermal resistance of 350 K/W for heat dissipation planning in minimal footprint designs. Verify that the 60 V breakdown voltage exceeds the maximum circuit voltage.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for compact surface-mount applications. The SN7002N variant provides a balance of low on-resistance and fast switching characteristics suitable for general-purpose electronics. The H6327 suffix indicates the specific packaging configuration used for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other N-channel MOSFETs with matching 60 V ratings and SOT-23 packages. Verify pinout compatibility (Gate-Drain-Source) before substitution. Check if alternative parts meet the same AEC-Q101 qualification and dv/dt specifications.