SQD40131EL_GE3

$1.36

Description：MOSFET P-CH 40V 50A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ce24fd0eefe9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQD40131EL_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 40V 50A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQD40131EL_GE3

Description：MOSFET P-CH 40V 50A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：62W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SQD40131EL_GE3

SQD40131EL_GE3

Single FETs, MOSFETs Overview

The SQD40131EL_GE3 is a Vishay Siliconix automotive-grade P-Channel MOSFET utilizing TrenchFET technology. It features a -40 V drain-source voltage and supports a continuous drain current of -50 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0115 Ω at VGS = -10 V and -30 A. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-252 (DPAK) package with the drain connected to the tab.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards
TrenchFET power MOSFET architecture for optimized performance
Package engineered for low thermal resistance
Verified through 100% gate charge and single pulse avalanche testing

Single FETs, MOSFETs Applications

Automotive load switching applications
High-side power control circuits
Power distribution systems requiring ruggedized components

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheet documentation. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives and REACH SVHC requirements as defined in the product specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive reliability and high surge capability. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Verify that the gate drive voltage meets the threshold requirements for optimal on-state conduction characteristics under expected operating loads.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix SQD series, which comprises automotive-qualified P-Channel MOSFETs. The series utilizes TrenchFET technology to deliver enhanced performance metrics compared to standard planar devices. These components are specifically designed to meet the stringent environmental and electrical demands of modern automotive electronic systems.