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SQD90P04-9M4L_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 40V 90A TO252AA. Review the specifications below when checking this part for your BOM.
The SQD90P04-9M4L_GE3 is a Vishay Siliconix automotive-grade P-channel MOSFET utilizing TrenchFET technology. It features a -40 V drain-source voltage and a continuous drain current of -90 A at 25 °C. The device offers a maximum on-state resistance of 0.016 Ω at VGS = -4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and includes avalanche energy ratings of 125 mJ.
Verify the complete part number including the suffix against official Vishay documentation before procurement. Confirm that the TO-252 package variant matches your PCB footprint requirements. Ensure compliance with RoHS and halogen-free material specifications as defined in the product summary.
Select this component when designing for automotive environments requiring high surge current handling and robust avalanche capability. Evaluate the thermal impedance characteristics relative to your specific PCB copper area, as the junction-to-ambient rating depends heavily on the mounting configuration.
This device belongs to the SQD series of Vishay Siliconix power MOSFETs. It is specifically engineered for automotive electronics where high reliability under extreme thermal conditions is mandatory. The single-channel configuration simplifies circuit design compared to dual or triple channel alternatives.
No public confirmed substitute part numbers are available in the provided datasheet.
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