Single FETs, MOSFETs SQJA92EP-T1_GE3 product image

SQJA92EP-T1_GE3

$1.16
  • Description:MOSFET N-CH 80V 57A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:a9d58e691618 Category: Brand:

  
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SQJA92EP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 80V 57A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJA92EP-T1_GE3

  • Description:MOSFET N-CH 80V 57A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SQJA92EP-T1_GE3

SQJA92EP-T1_GE3

Single FETs, MOSFETs Overview

The SQJA92EP-T1_GE3 is an automotive-grade N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage of 80 V and a continuous drain current of 57 A at 25 °C case temperature. The device offers a typical on-state resistance of 7.8 mΩ at VGS = 10 V. Packaged in the leadless PowerPAK SO-8L format, it supports junction temperatures up to 175 °C and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture
  • 100% tested for RDS(on) and single pulse avalanche capability

Single FETs, MOSFETs Applications

  • Automotive electronic systems requiring high thermal stability
  • High-side or low-side switching applications
  • Power management circuits operating within 80 V limits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Ensure that the component meets the required AEC-Q101 qualification level for your target application. Cross-reference the datasheet revision date with manufacturing lot codes to confirm compliance with current material categorization and compliance definitions provided by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and high current handling are required in a compact surface-mount footprint. Consider the thermal resistance characteristics and the specific gate charge requirements for driving efficiency. Validate that the PowerPAK SO-8L package dimensions align with your PCB layout constraints and soldering profile recommendations.

Single FETs, MOSFETs Part Context

This part belongs to the SQJA series of Vishay Siliconix N-channel MOSFETs designed for automotive environments. It shares the PowerPAK SO-8L package family but differs in electrical ratings from other variants like the SQJA96EP. The series emphasizes robustness through 100% UIS testing and compliance with strict automotive quality standards.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same package and voltage class include the SQJA94EP-T1_GE3. Verify pinout compatibility and ensure that the alternative part's on-resistance and current ratings meet or exceed the design requirements of the original circuit.

Single FETs, MOSFETs FAQ

Is the SQJA92EP-T1_GE3 suitable for high-temperature automotive environments?

Yes, the device is qualified under AEC-Q101 standards and supports an operating junction temperature range up to +175 °C.

What is the maximum pulsed drain current for this MOSFET?

The absolute maximum rating for pulsed drain current (IDM) is specified as 150 A.

SQJA92EP-T1_GE3SQJA92EP-T1_GE3
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