SQJQ148E-T1_GE3

$2.38

Description：MOSFET N-CH 40V 375A PPAK 8 X 8
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3221cddff910 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQJQ148E-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 375A PPAK 8 X 8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJQ148E-T1_GE3

Description：MOSFET N-CH 40V 375A PPAK 8 X 8
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4930 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：325W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 8 x 8
Package / Case：PowerPAK® 8 x 8

Single FETs, MOSFETs datasheet and documents for SQJQ148E-T1_GE3

SQJQ148E-T1_GE3

Single FETs, MOSFETs Overview

The SQJQ148E-T1_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 375 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 1.6 mΩ at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a thin 1.6 mm PowerPAK 8 x 8L package.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET Gen IV power MOSFET architecture
Thin 1.6 mm profile with very low thermal resistance
100% Rg and UIS tested for quality assurance

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current motor control applications
Low-side switching in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm compliance requirements. Ensure that the ordering information matches the exact package variant and qualification status required for the target application. Cross-reference datasheet revision numbers to validate technical parameters before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive applications requiring low conduction losses. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Confirm that gate drive voltages align with the threshold characteristics and ensure PCB layout supports the high current capabilities of the PowerPAK 8 x 8L package.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJQ series of automotive MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance in a compact form factor. The device is designed specifically for demanding automotive environments, offering robust performance under high thermal stress and high current conditions.