SSM3J118TU,LF

$0.40

Description：PB-F SMALL LOW ON RESISTANCE PCH
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e9edd1ced361 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3J118TU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F SMALL LOW ON RESISTANCE PCH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3J118TU,LF

Description：PB-F SMALL LOW ON RESISTANCE PCH
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：240mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：137 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UFM
Package / Case：3-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for SSM3J118TU,LF

SSM3J118TU,LF

Single FETs, MOSFETs Overview

The SSM3J118TU,LF is a P-channel silicon MOSFET utilizing Toshiba's U-MOS technology. It features a drain-source voltage (Vdss) of -30 V and a continuous drain current (Id) of -1.4 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.24 Ω at a gate-source voltage (Vgs) of 10 V. Power dissipation is rated at 500 mW, with an operating junction temperature range up to 150°C. It is housed in the UFM (SOT-323F) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes U-MOS technology for low on-resistance performance
Designed for high-speed switching applications
RoHS compliant construction

Single FETs, MOSFETs Applications

DC-DC converters
High-speed switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm that the component matches the required electrical specifications for the target application before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with a 30 V rating. Ensure the design accommodates the 0.24 Ω on-resistance at 10 V gate drive and the 500 mW power dissipation limit within the thermal constraints of the UFM package.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOS series of silicon MOSFETs. It is designed as a surface-mount solution for portable electronics and power management systems where space efficiency and switching speed are critical requirements.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible P-channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative components.