SSM3J35AMFV,L3F

Single FETs, MOSFETs Overview

The SSM3J35AMFV,L3F is a single P-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVII technology in an SOT-723-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 250 mA, and a maximum on-resistance (Rds(on)) of 1.1 Ohms at Vgs = -4.5 V. The device operates with a gate-source voltage range of ±10 V and has a power dissipation rating of 500 mW. It supports an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single P-channel configuration for compact circuit integration
• U-MOSVII silicon technology for enhanced performance
• Low on-resistance characteristics for efficient switching
• Surface-mount SOT-723-3 packaging for automated assembly

Single FETs, MOSFETs Applications

• Battery protection circuits
• Load switch applications
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix L3F to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official Toshiba documentation prior to procurement. Ensure storage conditions align with semiconductor handling standards to maintain device integrity before soldering.

Single FETs, MOSFETs Selection Notes

Select this component when a low-current P-channel switch is required in space-constrained designs. The SOT-723-3 package offers a small footprint suitable for portable electronics. Consider the 250 mA current limit and 1.1 Ohm on-resistance for thermal management calculations in high-density PCB layouts.

Single FETs, MOSFETs Part Context

This device belongs to the SSM3J35AM series of small-signal MOSFETs. It is distinct from variants like the SSM3J35CT which uses different packaging and exhibits higher on-resistance. The U-MOSVII generation provides improved switching characteristics compared to older MOSVI technologies found in other Toshiba discrete transistor lines.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include SSM3J35AMFV without the L3F suffix if reel format differs. Cross-package replacements such as SSM3J35CT require evaluation of pin compatibility and electrical parameter differences, particularly regarding on-resistance and current handling capabilities.