SSM3K48FU,LF

$0.24

Description：MOSFET N-CH 30V 100MA USM
Series：U-MOSIII
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ecacbaba9de1 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3K48FU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 30V 100MA USM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3K48FU,LF

Description：MOSFET N-CH 30V 100MA USM
Series：U-MOSIII
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：15.1 pF @ 3 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：USM
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for SSM3K48FU,LF

SSM3K48FU,LF

Single FETs, MOSFETs Overview

The SSM3K48FU,LF is a silicon N-channel MOSFET utilizing U-MOSIII technology, designed for load switching applications. It features a 30 V drain-source voltage rating and supports a continuous drain current of 100 mA at 25°C ambient temperature. The device offers low ON-resistance, specified as a maximum of 3.2 Ω at VGS = 4.0 V and 5.4 Ω at VGS = 2.5 V. It operates with a gate-source voltage range of ±20 V and dissipates up to 150 mW when mounted on an FR4 board. The component is housed in a USM (SC-70) surface-mount package.

Single FETs, MOSFETs Feature Summary

Supports 2.5-V drive capability for low-voltage control interfaces
Features low ON-resistance optimized for efficient power switching
Utilizes U-MOSIII silicon technology for enhanced performance

Single FETs, MOSFETs Applications

Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm lead-free status and packaging configuration. Ensure that the requested part number matches the exact electrical specifications required for the target circuit design. Cross-reference the manufacturer's datasheet revision history to validate the most current technical parameters before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a compact N-channel MOSFET with low ON-resistance suitable for 2.5-V logic levels. Consider the 30 V breakdown voltage and 100 mA current limit when designing power paths. Evaluate thermal dissipation requirements based on the 150 mW power rating and ensure adequate copper pad area on the PCB to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This device belongs to the Toshiba SSM3K series of small-signal MOSFETs. It is manufactured using U-MOSIII technology, which provides improved switching characteristics compared to standard MOSFETs. The component is intended for use in portable electronic devices and battery-powered systems where space constraints and energy efficiency are critical design factors.