SSM6J422TU,LF

Single FETs, MOSFETs Overview

The SSM6J422TU,LF is a single-channel P-Channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVI technology within a UF-6 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of -20 V and a continuous drain current (Id) of -4.0 A. The device exhibits a maximum on-resistance (Rds(on)) of 42.7 mΩ at a gate-source voltage (Vgs) of 4.5 V. It operates with a gate-source voltage range of +6 V to -8 V and features a gate charge (Qg) of 12.8 nC. The component supports an operating temperature range from -55°C to +150°C with a power dissipation rating of 1 W.

Single FETs, MOSFETs Feature Summary

• Incorporates U-MOSVI silicon technology for enhanced performance in small signal applications.
• Provides low on-resistance characteristics optimized for efficient power switching.
• Features automotive qualification compliance ensuring reliability under rigorous conditions.

Single FETs, MOSFETs Applications

• Load switching circuits
• Power management systems
• Automotive electronic modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the UF-6 package dimensions align with your PCB footprint requirements. Ensure that the thermal management design accommodates the specified power dissipation limits at the intended operating temperatures to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with a -20 V rating and approximately 4 A current capacity is required. The UF-6 package offers a compact solution for space-constrained designs. Consider the 42.7 mΩ on-resistance for efficiency calculations. Verify that the -8 V maximum gate-source voltage fits within your driver circuit's output capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the SSM6J422 series of small signal MOSFETs from Toshiba. It is designed for general-purpose switching applications requiring reliable performance in compact form factors. The U-MOSVI technology platform provides a balance of low on-resistance and fast switching speeds suitable for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other Toshiba P-Channel MOSFETs in the UF-6 package with similar voltage and current ratings. Verify pin compatibility and electrical specifications such as Rds(on) and Qg before substitution. Consult official replacement guides for cross-reference data.