SSV1BC847BDW1T1

Diode Arrays Overview

The SSV1BC847BDW1T1 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features two independent NPN transistors housed in a compact surface-mount package, specifically the SC-70-6 (also known as SOT-363 or SC-88). The device supports a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The maximum continuous DC collector current is rated at 100 mA per transistor. Power dissipation is limited to 380 mW. The component exhibits a transition frequency (fT) of 100 MHz and a minimum DC current gain (hFE) of 200. It operates within a temperature range from -55°C to +150°C.

Diode Arrays Feature Summary

• Dual NPN configuration providing two independent switching elements in a single compact footprint
• High voltage tolerance with 45 V collector-emitter and 50 V collector-base ratings
• Optimized for high-frequency applications with a 100 MHz transition frequency
• Robust thermal performance supporting operation up to 150°C junction temperature

Diode Arrays Applications

• General-purpose signal switching and amplification circuits
• Low-power digital logic interface and level shifting
• Consumer electronics internal signal processing
• Industrial control board I/O expansion

Diode Arrays Procurement Notes

Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the SC-70-6 package dimensions align with the PCB footprint requirements. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the part number with authorized distributors to ensure authenticity and traceability of the manufacturing batch.

Diode Arrays Selection Notes

Select this component when space constraints require dual NPN functionality in a minimal surface-mount package. The 45 V rating makes it suitable for low-voltage digital systems rather than high-power analog applications. Consider the 100 mA current limit for load driving capabilities. The high hFE ensures efficient base drive requirements, reducing power consumption in control circuits compared to lower-gain alternatives.

Diode Arrays Part Context

This part belongs to the BC847BDW1 series of dual NPN transistors from onsemi. It is designed as a cost-effective solution for replacing discrete dual-transistor setups in portable and consumer devices. The SC-70-6 package offers significant size reduction compared to traditional TO-92 or SOT-23 configurations, facilitating denser circuit board layouts in modern electronic products.

Diode Arrays Replacement Considerations

Direct substitutes include other dual NPN transistors in SC-70-6 packages with matching 45 V/100 mA ratings, such as the BC847CDW1T1G or equivalent parts from manufacturers like Diodes Incorporated or Nexperia, provided pinouts are identical.