Single FETs, MOSFETs STB21N65M5 product image

STB21N65M5

$4.15
  • Description:MOSFET N-CH 650V 17A D2PAK
  • Series:MDmesh™ V
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e8d1b7d800ef Category: Brand:

  
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STB21N65M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 17A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB21N65M5

  • Description:MOSFET N-CH 650V 17A D2PAK
  • Series:MDmesh™ V
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STB21N65M5

STB21N65M5

Single FETs, MOSFETs Overview

The STB21N65M5 is an N-channel Power MOSFET from the MDmesh M5 series, housed in a D²PAK (TO-263) package. It features a drain-source breakdown voltage of 650 V and a maximum continuous drain current of 17 A at 25 °C case temperature. The device exhibits an extremely low static drain-source on-resistance with a typical value of 150 mΩ and a maximum of 179 mΩ. Total gate charge is typically 50 nC, supporting efficient switching performance.

Single FETs, MOSFETs Feature Summary

  • Utilizes MDmesh M5 vertical process technology combined with PowerMESH horizontal layout for superior power density.
  • Offers high dv/dt capability and excellent switching performance suitable for hard switching applications.
  • Features extremely low on-resistance to minimize conduction losses in high-power designs.
  • Subjected to 100% avalanche testing to ensure robustness under transient conditions.

Single FETs, MOSFETs Applications

  • High-power PFC topologies
  • PWM converters
  • Hard switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific order code against the manufacturer's official documentation to confirm the D²PAK package type. Ensure that thermal management requirements align with the junction-to-case thermal resistance specifications provided in the datasheet. Confirm environmental compliance grades such as ECOPACK if required by the target application standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage ratings and low conduction losses. Consider the thermal resistance values for heat sink sizing based on expected operating currents. Evaluate the gate charge requirements against the driving circuit capabilities to optimize switching speed and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M5 family of super-junction high-voltage MOSFETs designed for high-efficiency power conversion. It shares core electrical characteristics with other variants like STF21N65M5 and STI21N65M5, differing primarily in the physical package configuration to suit surface mount or through-hole assembly needs.

Single FETs, MOSFETs Replacement Considerations

STF21N65M5, STI21N65M5, and STP21N65M5 are confirmed substitutes within the same product family offering identical electrical performance but utilizing different packages such as TO-220FP, I²PAK, and TO-220 respectively.

STB21N65M5STB21N65M5
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