STD10N60DM2

Single FETs, MOSFETs Overview

The STD10N60DM2 is an N-channel Power MOSFET from the MDmesh DM2 series, manufactured by STMicroelectronics. It features a 600V drain-source voltage and an 8A continuous drain current at case temperature. The device offers a typical on-resistance of 440 mΩ and is housed in a DPAK surface-mount package. Key electrical characteristics include a maximum gate charge of 13.5 nC at 10V and an input capacitance of 375 pF at 100V. It supports a junction temperature up to 150°C and is RoHS compliant.

Single FETs, MOSFETs Feature Summary

• Fast-recovery body diode with low recovery charge and time
• Extremely low gate charge and input capacitance for efficient switching
• Low on-resistance optimized for high-efficiency power conversion
• Zener-protected gate structure for enhanced ruggedness

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies
• Bridge rectifier applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required RoHS3 compliance standards for your target market. Cross-reference the DPAK package dimensions with your PCB footprint library to guarantee mechanical compatibility during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring fast-switching performance with minimal reverse recovery losses. The MDmesh DM2 technology provides superior dv/dt ruggedness compared to standard MOSFETs. Ensure the thermal design accommodates the 85W power dissipation rating at the specified case temperature to maintain reliability under load.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM2 family of fast-recovery diode MOSFETs, designed to combine low RDS(on) with excellent diode recovery characteristics. It serves as a surface-mount alternative to through-hole variants like the STF10N60M2, offering similar electrical performance in a compact DPAK form factor suitable for automated manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes within the same series include STD11N60DM2 and STD12N60DM2AG, which offer higher current ratings. For through-hole requirements, the STF10N60M2 provides equivalent electrical characteristics in a TO-220FP package.