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STD2NK70Z-1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 700V 1.6A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STD2NK70Z-1
- Description：MOSFET N-CH 700V 1.6A IPAK
- Series：SuperMESH™
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：11.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for STD2NK70Z-1
Single FETs, MOSFETs Overview
The STD2NK70Z-1 is an N-channel SuperMESH™ MOSFET from STMicroelectronics, housed in a TO-251 (IPAK) package. It features a drain-source voltage of 700 V and a continuous drain current of 1.6 A at 25°C. The static on-resistance is typically 6 Ω with a maximum of 7 Ω. Total power dissipation reaches 45 W at 25°C. The device includes built-in back-to-back Zener diodes for gate protection, enhancing ESD capability to 2000 V. It is avalanche tested and optimized for high dv/dt performance.
Single FETs, MOSFETs Feature Summary
- SuperMESH™ technology optimizes strip-based layout to minimize on-resistance while maintaining high dv/dt capability.
- Integrated back-to-back Zener diodes protect the gate against transients and improve ESD robustness without external components.
- 100% avalanche tested for reliability under unclamped inductive load conditions.
- Minimized gate charge supports efficient switching performance.
Single FETs, MOSFETs Applications
- Single-ended switch-mode power supplies in monitors
- Computer and industrial applications
- Welding equipment
- Flyback configuration for battery chargers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-1' corresponds to the IPAK tube packaging rather than the DPAK tape-and-reel format. Confirm that the component meets RoHS standards as indicated in the datasheet. Ensure the design accounts for the thermal resistance limits provided in the absolute maximum ratings table to maintain safe operating junction temperatures during operation.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring robust gate protection and high dv/dt tolerance. The IPAK package offers through-hole mounting options suitable for specific board layouts. Consider the 700 V rating and 1.6 A current limit when designing circuits. The integrated Zener diodes simplify design by removing the need for external gate clamping components.
Single FETs, MOSFETs Part Context
This part belongs to the SuperMESH™ series of N-channel MOSFETs, representing an optimization of ST's PowerMESH™ layout. It complements the company's high-voltage range, including MDmesh™ products. The series focuses on reducing on-resistance and ensuring high dv/dt capability for demanding applications.
Single FETs, MOSFETs Replacement Considerations
The STD2NK70ZT4 is a pin-compatible alternative within the same family but utilizes DPAK packaging and tape-and-reel shipping instead of IPAK tubes.
Single FETs, MOSFETs FAQ
What is the purpose of the internal Zener diodes?
The built-in back-to-back Zener diodes enhance ESD capability and safely absorb voltage transients applied between the gate and source, eliminating the need for external protective components.
How does the SuperMESH™ technology benefit this device?
It optimizes the strip-based PowerMESH™ layout to significantly lower on-resistance while ensuring excellent dv/dt capability for demanding applications.
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