STD8NM60ND

Single FETs, MOSFETs Overview

The STD8NM60ND is an N-channel Power MOSFET from STMicroelectronics, utilizing FDmesh™ II technology. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 7 A at case temperature. The device offers a maximum on-resistance of 0.59 Ω at 10 V gate drive. It is housed in a DPAK (TO-252-3) surface-mount package with a tab for thermal management. The component operates up to a junction temperature of 150°C and includes a fast-recovery body diode.

Single FETs, MOSFETs Feature Summary

• Implements second-generation MDmesh™ or FDmesh™ II technology for optimized performance
• Integrates a fast-recovery body diode for efficient switching applications
• Designed for high-voltage power switching with low conduction losses

Single FETs, MOSFETs Applications

• High-frequency power supplies
• Motor control circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and pinout configuration before integration, as package variations may exist within the MDmesh family. Confirm that the DPAK thermal pad connection meets your PCB layout requirements for adequate heat dissipation. Ensure the gate drive voltage aligns with the specified 10 V threshold for optimal Rds(on) performance. Check for any recent Product Change Notifications regarding assembly sites or material composition updates.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for 600 V applications with moderate current demands around 7 A. The DPAK package provides a balance between thermal performance and board space efficiency compared to through-hole alternatives. Consider the 0.59 Ω on-resistance for loss calculations in high-efficiency designs. This part is suitable for replacing older MDmesh I devices where improved switching characteristics are needed.

Single FETs, MOSFETs Part Context

The STD8NM60ND belongs to STMicroelectronics' MDmesh™ DM2/II series of N-channel Power MOSFETs. This series is engineered for general-purpose power switching, offering a robust combination of low on-resistance and high voltage blocking capability. The DPAK variant is widely used in consumer electronics and industrial equipment due to its compact form factor and reliable thermal handling.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STD8N60DM2 and STD8NM60N, which share similar electrical specifications and packaging. Verify compatibility with existing footprints and thermal design constraints when transitioning between these variants.