STF7N52K3

Single FETs, MOSFETs Overview

The STF7N52K3 is a discontinued N-channel enhancement mode MOSFET from STMicroelectronics, belonging to the SuperMESH3 series. It features a 525 V drain-source voltage and a continuous drain current of 6 A at case temperature. The device utilizes a TO-220FP through-hole package with a maximum power dissipation of 25 W. Key electrical characteristics include a gate charge of 33 nC at 10 V, an input capacitance of 870 pF at 100 V, and a maximum on-resistance of 850 mΩ at 10 V gate drive. It operates up to a junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• SuperMESH3 technology combines optimized strip-based layout with vertical structure for low on-resistance and high avalanche capability.
• 100% avalanche tested for reliability in demanding applications.
• Gate charge minimized to improve switching performance.
• Intrinsic Zener protection between gate and source.

Single FETs, MOSFETs Applications

• High-voltage power conversion circuits
• Industrial motor control systems
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

This component has been officially declared obsolete by the manufacturer. Verification of end-of-life status is required before design finalization. Engineers must confirm that no active production runs exist and assess the long-term availability risks associated with sourcing remaining stock from third-party distributors.

Single FETs, MOSFETs Selection Notes

Designers should evaluate alternative components due to the discontinuation status. Considerations must include matching voltage ratings, current handling capabilities, and thermal performance within the target application constraints. Package compatibility and pinout alignment are critical when selecting replacement devices to ensure seamless integration into existing hardware layouts.

Single FETs, MOSFETs Part Context

The STF7N52K3 belongs to the SuperMESH3 family, which represents an evolution of ST's PowerMESH technology. This series focuses on reducing on-resistance while maintaining robust dynamic performance and avalanche ruggedness. The part is designed for medium-power applications requiring high voltage tolerance and reliable switching behavior in industrial environments.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute: TK10A55D manufactured by Toshiba Semiconductor and Storage. Verify electrical parameter compatibility and package differences before implementation.