STF9HN65M2

Single FETs, MOSFETs Overview

The STF9HN65M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. It features a 650 V drain-source breakdown voltage and a typical on-resistance of 1.3 Ohms. The device supports a continuous drain current of 5.5 A at case temperature. Key electrical parameters include a gate charge of 14 nC, a threshold voltage of 3 V, and power dissipation of 20 W. It operates within a temperature range of -55°C to +150°C and utilizes a TO-220FP package.

Single FETs, MOSFETs Feature Summary

• MDmesh M2 technology with strip layout for low on-resistance
• Optimized switching characteristics for high efficiency
• Zener-protected gate structure

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Power factor correction circuits
• Isolated flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the TO-220FP package variant matches the thermal requirements of the target application. Cross-reference the part number with STMicroelectronics' current production status to confirm availability and lifecycle stage before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 650 V blocking capability with moderate current handling. The MDmesh M2 technology offers a balance between conduction losses and switching performance. Ensure the thermal design accommodates the 20 W power dissipation rating in the TO-220FP package. Verify that the gate charge characteristics align with the driving circuit's capabilities for optimal switching speed.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh M2 family of N-channel Power MOSFETs from STMicroelectronics. The series is designed for general-purpose high-voltage switching applications. The technology utilizes an improved vertical structure to achieve superior figure-of-merit compared to previous generations. This specific model represents a mid-range current option within the 650 V portfolio.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include STF11N65M2 and STL13N65M2 from the same MDmesh M2 family. Verify pin compatibility and thermal resistance values when substituting. Ensure the replacement part meets or exceeds the required voltage and current ratings for the specific circuit design.