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STFI11N65M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 7A I2PAKFP. Review the specifications below when checking this part for your BOM.
STFI11N65M2 is an N-channel Power MOSFET from STMicroelectronics utilizing MDmesh M2 technology. It features a 650 V drain-source voltage and a typical on-resistance of 340 mOhms. The device supports a continuous drain current of 11 A in an I2PAKFP (TO-220FP) through-hole package. Key electrical parameters include a maximum power dissipation of 25 W, a gate charge of 22 nC at 10 V, and a threshold voltage range of 3 V to 5 V. Operating temperatures span from -55 °C to +150 °C.
Verify the exact suffix against the manufacturer's official datasheet to confirm pinout and thermal characteristics. Ensure the component matches the required I2PAKFP package dimensions. Confirm RoHS compliance status with the supplier documentation before integration into production designs.
Select this component for applications requiring high-voltage handling with moderate current capacity. The MDmesh M2 technology offers superior performance compared to standard planar MOSFETs. Consider the thermal resistance of the TO-220FP package for heat dissipation requirements in your specific circuit layout.
The STFI11N65M2 belongs to the MDmesh M2 series of super-junction power MOSFETs. This series is designed to replace traditional high-voltage MOSFETs in demanding power supply applications. It shares architectural similarities with other STF and STD variants but differs in package type and specific electrical ratings.
Direct replacements within the same series include STFI15N65M5 or STFI24N60M2, provided voltage and current ratings are compatible. Verify pin compatibility and thermal performance when substituting with other manufacturers' equivalents.
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