STH200N10WF7-2

$5.70

Description：MOSTFET N-CH 100V 180A H2PAK-2
Series：-
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:45983ae4dd5b Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STH200N10WF7-2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSTFET N-CH 100V 180A H2PAK-2. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STH200N10WF7-2

Description：MOSTFET N-CH 100V 180A H2PAK-2
Series：-
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4430 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：340W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：H2PAK-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STH200N10WF7-2

STH200N10WF7-2

Single FETs, MOSFETs Overview

The STH200N10WF7-2 is an N-channel Power MOSFET utilizing STripFET F7 technology with an enhanced trench gate structure. It features a 100 V drain-source voltage rating and a maximum continuous drain current of 180 A at TC = 25 °C. The device offers an extremely low on-resistance, with a typical value of 3.2 mΩ and a maximum of 4.0 mΩ at VGS = 10 V and ID = 90 A. Total power dissipation reaches 340 W at TC = 25 °C. Key electrical parameters include a total gate charge of 93 nC, input capacitance of 4430 pF, and a junction-to-case thermal resistance of 0.44 °C/W.

Single FETs, MOSFETs Feature Summary

Enhanced trench gate structure provides best-in-class safe operating area (SOA) capability and high current surge handling.
Extremely low on-state resistance ensures optimal trade-off between linear mode withstand capability and switching operations.
High avalanche ruggedness supports repetitive or non-repetitive avalanche energy up to 840 mJ.

Single FETs, MOSFETs Applications

Hot-swap controllers
Electronic fuses
Load switches
In-rush current limiters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STH200N10WF7-2 against official STMicroelectronics documentation to confirm package type and environmental compliance grade. Ensure that application requirements for thermal management align with the specified junction-to-case thermal resistance and absolute maximum ratings provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust linear mode operation alongside efficient switching performance. The wide SOA and high surge current capability make it suitable for applications demanding high reliability under transient conditions. Verify that the driving circuit can supply the necessary gate charge within the required switching frequency constraints.

Single FETs, MOSFETs Part Context

This device belongs to the STripFET F7 series of low-voltage power MOSFETs from STMicroelectronics. It is housed in an H²PAK-2 surface-mount package designed for high-current applications. The product status is listed as full production data, indicating availability for new designs.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other STripFET F7 devices such as the STH240N10F7-2 or STH150N10F7-2 if different current ratings are needed. Ensure pinout compatibility and verify that thermal characteristics of alternative packages meet the system's heat dissipation requirements.