STI150N10F7

Single FETs, MOSFETs Overview

The STI150N10F7 is an N-channel Power MOSFET from the STripFET F7 series, housed in an I2PAK (TO-262) package. It features a breakdown voltage of 100 V and a typical on-state resistance (RDS(on)) of 3.6 mΩ at 10 V gate drive. The device supports a continuous drain current of 110 A at case temperature and offers high avalanche ruggedness. Key electrical characteristics include low internal capacitance and gate charge, enabling efficient switching performance suitable for power conversion applications.

Single FETs, MOSFETs Feature Summary

• Utilizes STripFET F7 technology with an enhanced trench gate structure to achieve very low on-state resistance.
• Reduces internal capacitance and gate charge for faster and more efficient switching operations.
• Provides excellent figure of merit (FoM) and low Crss/Ciss ratio for improved EMI immunity.
• Features high avalanche ruggedness for robust operation under transient conditions.

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification circuits
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and pinout configuration against your PCB footprint requirements before integration. Confirm that the thermal management design accommodates the I2PAK package's dissipation capabilities under expected load conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance. Cross-reference the datasheet revision date to confirm parameter validity.

Single FETs, MOSFETs Selection Notes

Select this component when a balance of low conduction losses and fast switching speeds is required in a through-hole or surface-mount compatible I2PAK package. Consider the 100 V rating and 110 A current capability relative to system peak loads. Evaluate the thermal resistance parameters if operating in high-temperature environments. Compare the FoM against alternative devices if EMI performance is a critical design constraint.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' STripFET F7 family, which focuses on optimizing the trade-off between on-resistance and gate charge. The I2PAK variant provides a robust mechanical solution compared to smaller surface-mount packages, often used in higher-power industrial and automotive applications where thermal performance and reliability are prioritized over minimal board space.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include STP150N10F7, which shares similar electrical characteristics but may differ in package or minor parametric tolerances. Verify compatibility with existing thermal and mechanical constraints when substituting. Always consult the latest datasheets for both original and replacement parts to ensure no functional changes have occurred due to manufacturing updates.