STO60N045DM9

Single FETs, MOSFETs Overview

The STO60N045DM9 is an N-channel Power MOSFET utilizing MDmesh DM9 super-junction technology, housed in a TO-LL surface-mount package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 56 A at 25 °C case temperature. The device offers a typical on-resistance of 35 mΩ with a maximum of 45 mΩ. Key electrical parameters include a total gate charge of 90 nC, input capacitance of 4710 pF, and peak diode recovery voltage slope of 120 V/ns. Thermal resistance from junction to case is rated at 0.4 °C/W.

Single FETs, MOSFETs Feature Summary

• Integrates a fast-recovery body diode with low reverse recovery charge and time for high-efficiency switching applications.
• Features extremely high dv/dt ruggedness and is 100% avalanche tested for robust operation under transient conditions.
• Includes an extra driving source pin to enhance switching performance by reducing parasitic effects.
• Delivers very low figure of merit (RDS(on)·Qg) through optimized silicon-based multi-drain manufacturing.

Single FETs, MOSFETs Applications

• LLC resonant converters
• High-efficiency bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as documentation references both TO-LL type A and A2 configurations. Confirm that the ordering suffix corresponds to the tape and reel packing format required for automated assembly processes. Ensure compatibility with the recommended PCB footprint dimensions provided in the mechanical data section before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with minimized conduction losses. The integrated Kelvin source pin facilitates precise gate drive control, making it suitable for high-frequency power conversion circuits. Evaluate thermal management requirements based on the specified junction-to-case resistance and ensure the operating environment supports the defined temperature ranges for optimal reliability.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh DM9 series, representing STMicroelectronics' advanced super-junction technology for medium-to-high voltage applications. The series is characterized by enhanced device structures derived from multi-drain manufacturing processes. It targets demanding power supply architectures where efficiency and switching speed are critical performance metrics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include the STP60N043DM9, which shares similar electrical ratings but utilizes a different TO-220 through-hole package. Designers must account for significant differences in thermal resistance, mounting style, and pin configuration when transitioning between these form factors.

Single FETs, MOSFETs FAQ

What is the purpose of the additional source pin?

The extra driving source pin serves as a Kelvin connection to improve switching performance by minimizing the impact of parasitic inductance during turn-on and turn-off transitions.

How does the device handle reverse recovery characteristics?

The integrated fast-recovery body diode exhibits low reverse recovery charge (Qrr) and time (trr), which reduces switching losses and electromagnetic interference in hard-switching applications.