STP130N8F7

Single FETs, MOSFETs Overview

The STP130N8F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing STripFET F7 technology with an enhanced trench gate structure. It features a drain-source breakdown voltage (VDS) of 80 V and a continuous drain current (ID) of 120 A. The device offers a maximum on-state resistance (RDS(on)) of 3.6 mΩ at VGS = 10 V. It operates within a temperature range of -55 °C to +175 °C and has a power dissipation rating of 135 W. The component is housed in a compact PowerFLAT 5x6-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes STripFET F7 technology for low on-state resistance and reduced internal capacitance
• Enhanced trench gate structure enables faster switching speeds and higher energy efficiency
• Low Crss/Ciss ratio provides improved electromagnetic interference (EMI) immunity
• Robust avalanche capability ensures reliable operation under transient stress conditions

Single FETs, MOSFETs Applications

• Battery-operated brushless DC (BLDC) motor drivers for power tools
• High-efficiency synchronous rectification in DC-DC converters
• Motor control stages in industrial automation systems
• General-purpose high-current switching applications requiring low thermal resistance

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against official STMicroelectronics documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with the intended PCB footprint, specifically the PowerFLAT 5x6-8 package dimensions. Cross-reference the requested variant with the manufacturer's active product list to confirm availability and lifecycle status before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling up to 120 A with minimal conduction losses below 4 mΩ. The 80 V rating suits applications powered by 8S to 15S battery packs. Consider the PowerFLAT 5x6 package for space-constrained designs needing efficient heat dissipation. Evaluate the gate charge requirements against the driving capability of the chosen controller IC to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the STripFET F7 family of power MOSFETs, designed to optimize the figure of merit between on-resistance and gate charge. It complements other components in ST's portfolio for motor control and power management, such as the STSPIN32F0252 driver used in reference designs like STEVAL-PTOOL2V1. The technology focuses on reducing system size and improving efficiency in portable and industrial equipment.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent devices within the same voltage and current ratings. Verify that any alternative maintains the PowerFLAT 5x6 package form factor for direct board compatibility. Ensure the substitute meets the required RDS(on) and thermal performance specifications for the specific application environment.