Single FETs, MOSFETs STP5N62K3 product image

STP5N62K3

$0.37
  • Description:MOSFET N-CH 620V 4.2A TO220AB
  • Series:SuperMESH3™
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:dc56b108ea46 Category: Brand:

  
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STP5N62K3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 620V 4.2A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP5N62K3

  • Description:MOSFET N-CH 620V 4.2A TO220AB
  • Series:SuperMESH3™
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):620 V
  • Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):70W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for STP5N62K3

STP5N62K3

Single FETs, MOSFETs Overview

The STP5N62K3 is an N-channel Power MOSFET from STMicroelectronics, utilizing SuperMESH3 technology. It features a 620V drain-source voltage and a continuous drain current of 4.2A in a TO-220 package. The device exhibits a typical on-resistance of 1.28 Ohms and a gate charge of 27nC. It operates within a temperature range of -55°C to +150°C and includes Zener protection for the gate terminal.

Single FETs, MOSFETs Feature Summary

  • SuperMESH3 technology provides optimized vertical structure for low on-resistance and high avalanche capability.
  • Features extremely high dv/dt capability and very low intrinsic capacitance for superior dynamic performance.
  • Includes 100% avalanche testing and improved diode reverse recovery characteristics.
  • Gate terminal is protected by integrated Zener diode.

Single FETs, MOSFETs Applications

  • High-voltage power conversion circuits
  • Switching applications requiring robust avalanche ruggedness
  • General-purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity and marking accuracy upon receipt. Ensure storage conditions comply with moisture sensitivity levels. Review datasheet specifications against application requirements before integration. Check for obsolescence status as availability may vary.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 620V blocking capability with moderate current handling. The TO-220 package suits through-hole mounting for higher power dissipation needs. Consider thermal management due to the 1.28 Ohm on-resistance at 4.2A. Verify gate drive compatibility with the 30V maximum rating.

Single FETs, MOSFETs Part Context

This part belongs to the SuperMESH3 family of N-channel MOSFETs designed for high-voltage applications. It represents an evolution of MDmesh technology, offering improved trade-offs between on-resistance and switching losses compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STF5N62K3 and STD5N62K3, which share similar electrical characteristics but differ in packaging (TO-220 vs DPAK). Verify pinout compatibility and thermal resistance differences when cross-referencing.

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