Single Diodes STPSC8H065DI product image

STPSC8H065DI

$1.88
  • Description:DIODE SIC 650V 8A TO220AC INS
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:63182c8696e2 Category: Brand:

  
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STPSC8H065DI is listed in the Single Diodes range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is DIODE SIC 650V 8A TO220AC INS. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for STPSC8H065DI

  • Description:DIODE SIC 650V 8A TO220AC INS
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):8A
  • Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:80 µA @ 650 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2 Insulated, TO-220AC
  • Supplier Device Package:TO-220AC ins
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for STPSC8H065DI

STPSC8H065DI

Single Diodes Overview

The STPSC8H065DI is a silicon carbide (SiC) power Schottky diode manufactured by STMicroelectronics. It features a 650 V repetitive reverse voltage rating and an 8 A average forward current capability in a TO-220AC-2 through-hole package. The device exhibits a typical forward voltage of 1.98 V at 8 A and supports a high forward surge current of 420 A. Reverse leakage current is specified at 65 uA, with an operating junction temperature range from -40°C to +175°C.

Single Diodes Feature Summary

  • Zero reverse recovery charge within the application current range, eliminating switching losses associated with minority carrier recombination.
  • Switching behavior remains independent of temperature due to minimal capacitive turn-off characteristics inherent to the Schottky construction.
  • High forward surge capability ensures robustness against transient electrical stresses during hard switching conditions.

Single Diodes Applications

  • Power Factor Correction (PFC) circuits
  • Bridge-less rectifier topologies
  • Hard switching power conversion stages

Single Diodes Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm RoHS compliance status via official documentation. Ensure ordering suffixes match exact package and tape/reel specifications. Validate datasheet revisions for parameter updates before final design integration.

Single Diodes Selection Notes

Select this component for applications requiring high-temperature operation up to 175°C and superior efficiency compared to standard silicon diodes. The TO-220AC-2 insulated package facilitates thermal management and isolation requirements. Consider the 420 A surge rating for systems experiencing significant inrush currents.

Single Diodes Part Context

This part belongs to the STPSC series of silicon carbide Schottky diodes. The series utilizes wide bandgap SiC substrates to achieve higher performance than conventional silicon devices. The specific model integrates a single diode configuration optimized for high-voltage power electronics applications.

Single Diodes Replacement Considerations

Cross-reference with other STPSC series variants such as STPSC4H065DI or STPSC10H065DI based on current handling requirements. Verify pinout compatibility and thermal resistance characteristics when substituting with equivalent components from other manufacturers.

STPSC8H065DISTPSC8H065DI
$1.88
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