Single FETs, MOSFETs STW19NM50N product image

STW19NM50N

$5.64
  • Description:MOSFET N-CH 500V 14A TO247-3
  • Series:MDmesh™ II
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:a1378137bfbb Category: Brand:

  
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STW19NM50N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 14A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW19NM50N

  • Description:MOSFET N-CH 500V 14A TO247-3
  • Series:MDmesh™ II
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:250mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for STW19NM50N

STW19NM50N

Single FETs, MOSFETs Overview

STW19NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. It features a vertical structure combined with a strip layout to achieve low on-resistance and gate charge. The device has a breakdown voltage of 500 V, a typical on-resistance of 0.2 Ohm, and a continuous drain current of 14 A. It is housed in a TO-247 package.

Single FETs, MOSFETs Feature Summary

  • Developed using the second generation of MDmesh technology for high efficiency
  • Combines vertical structure with strip layout for optimized performance
  • 100% avalanche tested for ruggedness
  • Low input capacitance and gate charge

Single FETs, MOSFETs Applications

  • High-efficiency converters
  • Demanding power conversion applications

Single FETs, MOSFETs Procurement Notes

Verify the specific part number STW19NM50N against official STMicroelectronics documentation to confirm active status and exact electrical parameters. Ensure compatibility with TO-247 mounting requirements and thermal management solutions suitable for 500 V operation. Cross-reference datasheet revisions for any updates to packaging or testing standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-channel switching at 500 V with moderate current handling. The MDmesh II technology offers a balance of low conduction losses and fast switching characteristics. Consider the TO-247 package for through-hole assembly and effective heat dissipation in industrial or general-purpose power supply topologies.

Single FETs, MOSFETs Part Context

The STW19NM50N belongs to the MDmesh II family of Power MOSFETs from STMicroelectronics. This series utilizes advanced silicon technologies to minimize on-resistance and gate charge, targeting high-performance power conversion needs. The TO-247 variant provides a standard through-hole footprint for reliable integration into various electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official STMicroelectronics substitution guides for verified alternatives within the MDmesh portfolio. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions.

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