STW56N65M2-4

$4.58

Description：MOSFET N-CH 650V 49A TO247-4L
Series：MDmesh™ M2
Mfr：STMicroelectronics
Package：Tube

SKU:88e839da8e28 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STW56N65M2-4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 49A TO247-4L. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW56N65M2-4

Description：MOSFET N-CH 650V 49A TO247-4L
Series：MDmesh™ M2
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：358W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for STW56N65M2-4

STW56N65M2-4

Single FETs, MOSFETs Overview

The STW56N65M2-4 is an N-channel Power MOSFET developed using MDmesh M2 technology, housed in a TO247-4 package. It features a typical on-resistance of 49 mOhm and a continuous drain current of 49 A at 650 V breakdown voltage. The device utilizes a strip layout and improved vertical structure to achieve low on-resistance and optimized switching characteristics. Key electrical attributes include extremely low gate charge and an excellent output capacitance profile. All units are 100% avalanche tested and feature Zener protection for enhanced reliability in demanding high-efficiency converter applications.

Single FETs, MOSFETs Feature Summary

MDmesh M2 technology with strip layout and improved vertical structure
Optimized switching performance via extra driving source pin
Extremely low gate charge and excellent output capacitance profile
Zener-protected and 100% avalanche tested

Single FETs, MOSFETs Applications

High efficiency converters
Demanding power conversion applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix -4 indicates the TO247-4 package configuration with an additional Kelvin source pin for improved switching performance. Confirm that the component is listed as Active status. Ensure the procurement documentation references the official STMicroelectronics datasheet for the MDmesh M2 series to validate the 49 mOhm typical resistance and 49 A current ratings. Cross-check the part number against authorized distributors to ensure authenticity and correct package identification.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency converters requiring low on-resistance and optimized switching characteristics. The TO247-4 package provides thermal efficiency suitable for high-power applications. The extra driving source pin facilitates better control of turn-on and turn-off losses. Consider the 650 V rating and 49 A current capacity for appropriate system voltage and load requirements.

Single FETs, MOSFETs Part Context

This part belongs to the STMicroelectronics MDmesh M2 series of N-channel super-junction power MOSFETs. The series covers breakdown voltages from 400 V to 650 V. The MDmesh M2 technology is characterized by its strip layout and improved vertical structure, which deliver low on-resistance and optimized switching performance compared to previous generations.