STWA72N60DM2AG

Single FETs, MOSFETs Overview

STWA72N60DM2AG is an automotive-grade N-channel Power MOSFET from the MDmesh DM2 series, housed in a TO-247 long leads package. It features a 600 V drain-source breakdown voltage and a maximum continuous drain current of 66 A at 25 °C case temperature. The device exhibits a typical on-resistance of 37 mΩ and a maximum of 42 mΩ. Key electrical parameters include a total gate charge of 121 nC, a turn-on delay time of 32 ns, and a fall time of 10.4 ns. It supports a peak diode recovery voltage slope of 50 V/ns and offers a single pulse avalanche energy rating of 1500 mJ.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Fast-recovery body diode with low reverse recovery charge and time
• Extremely high dv/dt ruggedness rated at 50 V/ns
• 100% avalanche tested with Zener protection

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code '72N60DM2' against official STMicroelectronics documentation. Confirm the package type matches the specified TO-247 long leads configuration. Ensure that procurement channels provide valid traceability records to guarantee compliance with the AEC-Q101 qualification requirements stated in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust switching performance under high-voltage conditions. The low on-resistance combined with fast recovery characteristics makes it suitable for minimizing conduction and switching losses. Consider the thermal resistance values when designing heat dissipation solutions for continuous operation at elevated temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM2 series of fast-recovery diode MOSFETs manufactured by STMicroelectronics. The series is engineered to deliver very low recovery charge and time alongside low on-resistance. These attributes are specifically targeted at optimizing efficiency in demanding power conversion applications.

Single FETs, MOSFETs Replacement Considerations

Consult official STMicroelectronics cross-reference lists or authorized distributor databases for verified substitute part numbers. Do not assume functional equivalence based solely on similar pinout configurations or generic specifications without verifying absolute maximum ratings and dynamic characteristics.