SUD50P10-43-E3

Description：MOSFET P-CH 100V 38A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:6955696eac5b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SUD50P10-43-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 100V 38A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD50P10-43-E3

Description：MOSFET P-CH 100V 38A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：43mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5230 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：8.3W (Ta), 136W (Tc)
Operating Temperature：-50°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD50P10-43-E3

SUD50P10-43-E3

Single FETs, MOSFETs Overview

The SUD50P10-43-E3 is a P-channel power MOSFET manufactured by Vishay Siliconix. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 38 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 26 mΩ at a gate-source voltage of -10 V. It operates within a junction temperature range of -55 °C to +175 °C and offers a power dissipation rating of 8.3 W at ambient temperature and 136 W at case temperature. The component utilizes the TrenchFET technology and is housed in a surface-mount DPAK-3 (TO-252-3) package.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology for optimized performance
Supports high-temperature operation up to 175 °C
Designed for surface-mount applications

Single FETs, MOSFETs Applications

DC-DC converters
Power switching circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation, as variations such as -E3 or -GE3 indicate RoHS compliance status. Confirm availability through authorized distributors, noting that some listings may indicate limited supply or end-of-life status. Ensure the ordering part number matches the required package and thermal specifications for your design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 100 V P-channel MOSFET with moderate current handling capabilities. Consider the thermal resistance and package type when designing heat dissipation strategies. Compare Rds(on) values at relevant gate drive voltages to ensure efficient switching performance in low-side or high-side configurations.

Single FETs, MOSFETs Part Context

This component belongs to the SUD series of power MOSFETs from Vishay Siliconix. The series typically employs TrenchFET technology to achieve low on-resistance and fast switching speeds. These devices are engineered for general-purpose power switching applications where efficiency and thermal stability are critical requirements.