SUP60020E-GE3

$3.26

Description：MOSFET N-CH 80V 150A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube

SKU:7fde6a299e58 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUP60020E-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 80V 150A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUP60020E-GE3

Description：MOSFET N-CH 80V 150A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：227 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10680 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SUP60020E-GE3

SUP60020E-GE3

Single FETs, MOSFETs Overview

The SUP60020E-GE3 is a Vishay Siliconix N-channel 80 V (D-S) MOSFET utilizing TrenchFET® technology. It features a maximum junction temperature of 175 °C and very low Qgd to reduce power loss during the Vplateau transition. The device supports a continuous drain current of 150 A at TC = 25 °C and offers a maximum RDS(on) of 0.0024 Ω at VGS = 10 V. Key dynamic parameters include a typical total gate charge (Qg) of 151.2 nC and a junction-to-case thermal resistance (RthJC) of 0.4 °C/W. It is housed in a TO-220AB package.

Single FETs, MOSFETs Feature Summary

TrenchFET® power MOSFET architecture for optimized performance
Very low Qgd reduces power loss from passing through Vplateau
Maximum 175 °C junction temperature capability
100 % Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

Power supply secondary synchronous rectification
DC/DC converter
Power tools
Motor drive switch
OR-ing / e-fuse

Single FETs, MOSFETs Procurement Notes

Verify the complete part number SUP60020E-GE3 against official Vishay documentation to ensure correct configuration. Confirm that the GE3 suffix indicates lead-free and halogen-free compliance as specified in the ordering information. Validate that the required package is TO-220AB. Ensure sourcing channels provide authentic components with traceable datasheet references to avoid counterfeit risks.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring an 80 V N-channel MOSFET with high current handling capabilities up to 150 A. Consider the low RDS(on) values for efficiency in power conversion stages. Evaluate the thermal management requirements based on the 0.4 °C/W junction-to-case resistance. Verify compatibility with gate drive voltages, noting specifications at both 10 V and 7.5 V VGS levels for optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix SUP series of N-channel MOSFETs. It utilizes TrenchFET® technology to achieve low on-resistance and fast switching speeds. The product is designed for robust operation in power electronics, featuring verified avalanche energy ratings and comprehensive testing for gate resistance and unclamped inductive switching.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics against the SUP60020E datasheet.