SUP60061EL-GE3

$3.64

Description：P-CHANNEL 80 V (D-S) MOSFET TO-2
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Bulk

SKU:66898b9baf1a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUP60061EL-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is P-CHANNEL 80 V (D-S) MOSFET TO-2. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUP60061EL-GE3

Description：P-CHANNEL 80 V (D-S) MOSFET TO-2
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：218 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9600 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SUP60061EL-GE3

SUP60061EL-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SUP60061EL-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features an 80 V drain-source voltage rating and a continuous drain current of -150 A at 25 °C case temperature. The device offers a maximum on-state resistance of 5.8 mΩ at VGS = -10 V and 8.1 mΩ at VGS = -4.5 V. Packaged in a TO-220AB through-hole housing, it supports a junction temperature up to 175 °C with a power dissipation of 375 W at 25 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for low thermal resistance
Logic-level gate driving compatibility
100% Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

Battery protection circuits
Motor drive control systems
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Ensure the procurement documentation matches the exact part number SUP60061EL-GE3 to confirm the TO-220AB package type. Cross-reference the document revision S23-0595-Rev. B for accurate electrical specifications during final validation.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low conduction losses. The TO-220AB package facilitates effective heat dissipation for power management tasks. Verify that the system's gate drive voltage aligns with the logic-level threshold requirements to ensure optimal performance and minimal on-resistance.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix P-channel MOSFET lineup designed for robust power switching. It integrates advanced trench technology to achieve superior performance metrics compared to standard planar devices. The TO-220AB form factor provides a reliable mounting solution for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides or contact technical support for verified equivalent parts. Do not assume pin-compatible alternatives without confirming absolute maximum ratings and thermal characteristics match the original design requirements.