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TC7SH02FU,LJ is listed in the Inverter Gates range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is IC GATE NOR 1CH 2-INP 5SSOP. Review the specifications below when checking this part for your BOM.
The TC7SH02FU,LJ is a single-channel, two-input NOR gate from Toshiba's SH series. It operates within a supply voltage range of 2.0 V to 5.5 V and features balanced propagation delays. The device supports an operating temperature range of -40°C to 85°C. Key electrical parameters include a maximum quiescent current of 20 µA at -40°C to 85°C and a typical propagation delay of 3.6 ns at 5.0 V with a 15 pF load. Input leakage current is specified at ±1.0 µA under standard conditions.
Verify the specific ordering suffix J(CT) confirms the -40°C to 85°C operating temperature range, as other variants may support up to 125°C. Confirm RoHS compatibility status directly with Toshiba representatives prior to procurement. Ensure design accounts for the absolute maximum ratings to prevent device deterioration or destruction during operation.
Select this component when a single two-input NOR function is required in a compact SOT-353 package. It is suitable for designs needing wide voltage operation from 2.0 V to 5.5 V. Consider the AEC-Q100 qualification if the application demands automotive-grade reliability. Verify that the 5.5 V input tolerance meets the system's interface requirements.
This part belongs to Toshiba's TC7SH series of CMOS digital integrated circuits. The SH series is characterized by low power consumption and high-speed operation. The TC7SH02 specifically implements NOR logic functions. The device utilizes silicon monolithic technology and is manufactured by Toshiba Semiconductor and Storage.
Direct substitutes must match the single-channel NOR function, SSOP5/USV package, and 2.0–5.5 V operating range. Verify that any replacement also meets AEC-Q100 requirements if automotive use is intended. Check pinout compatibility and ensure equivalent propagation delay and power dissipation characteristics.
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