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TH58NYG2S3HBAI6 is listed in the Memory IC range at ChipApex. The manufacturer field lists Kioxia America, Inc.. Its product description is IC FLASH 4GBIT PARALLEL 63BGA. Review the specifications below when checking this part for your BOM.
The TH58NYG2S3HBAI6 is a 4 Gbit Single-Level Cell (SLC) NAND flash memory manufactured by Kioxia America. It utilizes a 24 nm process technology and features an 8-bit parallel interface with a memory organization of 512 M x 8. The device operates within a voltage range of 1.7 V to 1.95 V and supports an industrial temperature range from -40°C to +85°C. It is housed in a 67-ball VFBGA package measuring 6.5x8 mm.
Verify the specific ordering suffix and moisture sensitivity level requirements before procurement. Confirm that the host system design accommodates the 1.7 V to 1.95 V power supply constraints. Ensure compliance with RoHS directives and check for any specific lifecycle status updates directly with the manufacturer, as availability may vary.
Select this component when a parallel interface SLC NAND solution is required for industrial applications. The 4 Gbit capacity and 8-bit bus width are suitable for embedded systems needing reliable non-volatile storage. Consider the VFBGA-67 package dimensions for PCB layout compatibility and verify thermal management capabilities for the specified operating temperature range.
This part belongs to Kioxia's NAND flash memory portfolio, designed for robust data storage. As a subsidiary of Kioxia Corporation, Kioxia America provides components leveraging advanced manufacturing processes. This specific model represents a legacy or specialized offering within their broader memory ecosystem, focusing on durability and consistent performance in demanding conditions.
The TC58NYG2S0HBAI6 is a documented alternative from the same manufacturer family. Verify pinout compatibility and electrical specifications before substitution. Other equivalents may exist but require careful validation against the original datasheet parameters.
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