TJ10S04M3L,LXHQ

Single FETs, MOSFETs Overview

The TJ10S04M3L,LXHQ is a P-Channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It features a 40 V drain-source voltage rating and supports a continuous drain current of 10 A at 25°C ambient temperature. The device utilizes the U-MOS VI technology in a DPAK-3 (TO-252-3) surface-mount package. Key electrical parameters include a maximum on-resistance of 27 mΩ, a gate charge of 6 nC, and a power dissipation capacity of 27 W. It operates with a threshold voltage of approximately 2 V and withstands a maximum junction temperature of +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes U-MOS VI silicon technology for enhanced switching performance
• Designed for automotive applications with AEC-Q101 qualification
• Optimized low gate charge for efficient drive requirements
• Robust thermal management capabilities within compact SMD packaging

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control interfaces
• Load switch applications in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LXHQ to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to prevent package damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage P-Channel MOSFET is required for automotive-grade reliability. The 40 V rating suits 12 V nominal systems. Compare the 27 mΩ on-resistance against thermal constraints. The DPAK-3 package offers a balance between current handling and board space efficiency for high-density designs.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOS VI series of silicon MOSFETs. It is specifically engineered for automotive environments, meeting AEC-Q101 standards. The device complements other parts in the TJxxS04M3L family, offering varying current ratings while maintaining consistent voltage specifications and package types for design flexibility.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other AEC-Q101 qualified P-Channel MOSFETs with similar 40 V ratings and DPAK-3 packages. Verify pin compatibility and thermal resistance values before substitution. Cross-reference with Toshiba's official replacement guide for guaranteed functional equivalence.