Single FETs, MOSFETs TK10E80W,S1X product image

TK10E80W,S1X

$3.92
  • Description:PB-F POWER MOSFET TRANSISTOR TO-
  • Series:DTMOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:d7d9aad717cc Category: Brand:

  
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TK10E80W,S1X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F POWER MOSFET TRANSISTOR TO-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK10E80W,S1X

  • Description:PB-F POWER MOSFET TRANSISTOR TO-
  • Series:DTMOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:550mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 300 V
  • FET Feature:-
  • Power Dissipation (Max):130W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for TK10E80W,S1X

TK10E80W,S1X

Single FETs, MOSFETs Overview

The TK10E80W,S1X is a high-voltage N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a low on-resistance of 1.0 ohms typical at VGS=10V, enabling efficient power switching in high-voltage applications. The device is housed in a TO-247 package, providing robust thermal performance and mechanical stability for industrial and automotive environments.

Single FETs, MOSFETs Feature Summary

  • High breakdown voltage capability for demanding power applications
  • Low on-state resistance to minimize conduction losses
  • Robust packaging for enhanced thermal dissipation

Single FETs, MOSFETs Applications

  • Industrial motor drives
  • Power supply units
  • Automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix S1X with the manufacturer or authorized distributor to confirm specific binning or testing criteria. Ensure the component source is an authorized channel to guarantee authenticity and traceability. Check for any recent lifecycle status updates such as obsolescence or last-time buy notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required. Consider the thermal resistance characteristics of the TO-247 package for heat sink design. Evaluate the gate charge specifications against the driving circuit capabilities to ensure optimal switching speed and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's high-voltage MOSFET lineup designed for power management. It complements other devices in the series offering similar voltage ratings but different current capacities. The TO-247 form factor is standard for through-hole mounting in high-power modules.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for direct replacements. Verify pin compatibility and electrical parameters match exactly. Common substitutes may include parts from other manufacturers with equivalent RDS(on) and BVdss ratings.

TK10E80W,S1XTK10E80W,S1X
$3.92
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