TK13A50DA(STA4,Q,M

$2.81

Description：MOSFET N-CH 500V 12.5A TO220SIS
Series：π-MOSVII
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:0823bb5dfe0d Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK13A50DA(STA4,Q,M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 500V 12.5A TO220SIS. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK13A50DA(STA4,Q,M

Description：MOSFET N-CH 500V 12.5A TO220SIS
Series：π-MOSVII
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：470mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1550 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

Single FETs, MOSFETs Overview

The TK13A50DA is a silicon N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage, utilizing π-MOS VII technology. It features a drain-source breakdown voltage of 500 V and a continuous DC drain current rating of 12.5 A at 25°C case temperature. The device exhibits a typical drain-source on-resistance of 0.39 Ω and a forward transfer admittance of 6.0 S. It operates within a channel temperature range up to 150°C and includes avalanche energy ratings of 416 mJ single pulse and 4.5 mJ repetitive. The component is housed in the JEITA SC-67 package.

Single FETs, MOSFETs Feature Summary

Utilizes π-MOS VII technology for optimized switching performance
Features low drain-source ON-resistance for reduced conduction losses
Provides high forward transfer admittance for efficient gate drive control
Includes robust avalanche energy capability for circuit protection

Single FETs, MOSFETs Applications

Switching regulator applications
High-efficiency power conversion circuits
General-purpose power switching systems

Single FETs, MOSFETs Procurement Notes

Verify RoHS compatibility status with the manufacturer prior to procurement, as indicated by lot number markings. Confirm that the specific ordering suffix matches the required environmental compliance level. Ensure design reliability accounts for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook under heavy load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 500 V N-channel MOSFET with moderate current handling capabilities. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate threshold voltage range aligns with the intended logic or driver interface levels for reliable enhancement mode operation.

Single FETs, MOSFETs Part Context

This part belongs to the TK13A50D series of power MOSFETs from Toshiba. It is designed for general switching applications where low on-resistance and high efficiency are critical. The device represents an evolution in silicon MOS technology aimed at improving performance metrics compared to earlier generations.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Cross-referencing requires matching voltage, current, and package specifications strictly.