TK14G65W5,RQ

Single FETs, MOSFETs Overview

The TK14G65W5,RQ is a silicon N-channel power MOSFET from Toshiba, utilizing DTMOSIV Super Junction technology. It features a 650V drain-source voltage and a continuous drain current of 13.7A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 300 milliohms at 10V gate drive and a typical gate charge of 40nC. Packaged in a surface-mount TO-263 (D2PAK) format, it supports a junction temperature up to 150°C and offers a thermal dissipation capacity of 130W when mounted to a case.

Single FETs, MOSFETs Feature Summary

• DTMOSIV Super Junction structure for low conduction loss
• Fast reverse recovery time characteristics
• Enhancement mode operation with low threshold voltage
• Surface-mount compatible TO-263 package

Single FETs, MOSFETs Applications

• Switching voltage regulators
• DC-DC converters
• Motor drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'RQ' against the official Toshiba datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering documentation explicitly references the DTMOSIV generation and the TO-263 form factor to prevent substitution errors with similar through-hole or lower-voltage variants within the broader product family.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring robust 650V blocking capability in a compact surface-mount footprint. The DTMOSIV architecture provides superior trade-offs between switching speed and conduction resistance compared to standard planar technologies. Evaluate thermal management requirements carefully, as the 130W power rating assumes adequate heatsinking to the exposed pad.

Single FETs, MOSFETs Part Context

This part belongs to the TK14 series of N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. The series leverages advanced Super Junction structures to achieve high performance in power switching applications. The specific model integrates the DTMOSIV technology, representing an evolution in silicon power transistor design focused on reducing energy losses during switching transitions.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba cross-reference documents for verified substitutes. Generic equivalents may differ in gate charge or thermal resistance profiles.