Single FETs, MOSFETs TK1P90A,LQ(CO product image

TK1P90A,LQ(CO

  • Description:MOSFET N-CH 900V 1A PW-MOLD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)

SKU:2d0f2da603d4 Category: Brand:

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TK1P90A,LQ(CO is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 900V 1A PW-MOLD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK1P90A,LQ(CO

  • Description:MOSFET N-CH 900V 1A PW-MOLD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PW-MOLD
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for TK1P90A,LQ(CO

TK1P90A,LQ(CO

Single FETs, MOSFETs Overview

The TK1P90A,LQ(CO is an N-channel power MOSFET from Toshiba's DTMOS-VI series, designed for high-voltage switching applications. It features a 900V drain-source voltage rating and a continuous drain current of 1A at 25°C. The device exhibits a maximum on-resistance of 9.0 ohms at 10V gate drive. Key electrical characteristics include a maximum gate charge of 13nC at 10V and an input capacitance of 320pF at 25V. It operates within a junction temperature range up to 150°C and is housed in a compact PW-MOLD package.

Single FETs, MOSFETs Feature Summary

  • High breakdown voltage capability suitable for demanding power systems
  • Compact PW-MOLD package design for reliable performance
  • Low gate charge characteristics for efficient switching

Single FETs, MOSFETs Applications

  • Switching voltage regulators
  • High-voltage power supply circuits
  • Industrial control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LQ(CO) against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the PW-MOLD package. Confirm RoHS compliance status as per the latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage handling with moderate current capacity. The 9.0-ohm on-resistance is optimal for low-current switching tasks where conduction losses are less critical than voltage isolation. Consider thermal management requirements due to the small package size when designing heat dissipation strategies.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's portfolio of high-voltage MOSFETs, specifically utilizing π-MOS IV technology. It is engineered for use in switch-mode power supplies and other converters where high voltage isolation is required. The product line emphasizes reliability and compact form factors for modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same voltage class. Verify pinout compatibility and thermal resistance values if replacing with components from other manufacturers. Ensure that any alternative device meets or exceeds the 900V rating and 1A current specification.

TK1P90A,LQ(COTK1P90A,LQ(CO

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