Single FETs, MOSFETs TK7P60W5,RVQ product image

TK7P60W5,RVQ

$2.31
  • Description:MOSFET N-CH 600V 7A DPAK
  • Series:DTMOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7ceb31afd6a6 Category: Brand:

  
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TK7P60W5,RVQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 7A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK7P60W5,RVQ

  • Description:MOSFET N-CH 600V 7A DPAK
  • Series:DTMOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 300 V
  • FET Feature:-
  • Power Dissipation (Max):60W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for TK7P60W5,RVQ

TK7P60W5,RVQ

Single FETs, MOSFETs Overview

The TK7P60W5,RVQ is a surface-mount N-channel Power MOSFET manufactured by Toshiba Semiconductor and Storage. It belongs to the DTMOSIV series and features a 600 V drain-source voltage rating with a continuous drain current of 7 A at ambient temperature. The device utilizes a TO-252 (DPAK) package, providing a maximum power dissipation of 60 W when mounted on a case. Key electrical characteristics include a gate threshold voltage of up to 3.7 V at 350 µA, a maximum gate charge of 15 nC at 10 V, and an input capacitance of 490 pF at 300 V. It supports a maximum junction temperature of 150 °C and operates with a maximum gate-source voltage of ±30 V.

Single FETs, MOSFETs Feature Summary

  • DTMOSIV technology for enhanced switching performance
  • High breakdown voltage capability suitable for high-voltage applications
  • Low gate charge for efficient drive requirements
  • Robust thermal management in compact SMD package

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor drivers
  • Power management switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '5' against official Toshiba documentation to confirm exact binning or revision status. Ensure the ordering part number matches the required tape-and-reel configuration. Cross-reference the datasheet version date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of high voltage blocking and moderate current handling in a standard DPAK footprint. Consider the 600 V rating for primary-side switching or secondary rectification in isolated topologies. Evaluate thermal resistance constraints given the 60 W case dissipation limit under your specific PCB copper layout conditions.

Single FETs, MOSFETs Part Context

This part is part of Toshiba's DTMOSIV family of N-channel power MOSFETs. It shares the core technology with variants like the TK7P60W,RVQ but may differ in specific electrical bins or packaging configurations indicated by the suffix. The series is designed for general-purpose power switching applications requiring reliability and efficiency.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct replacements such as the TK7P60W,RVQ only if official cross-reference data confirms identical pinout and electrical parameters.

TK7P60W5,RVQTK7P60W5,RVQ
$2.31
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