TLP781F(D4-FUNGB,F

Description：OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:e60a229694d3 Category: Transistor, Photovoltaic Output Optoisolators Brand: Toshiba Semiconductor and Storage

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Product introduction

TLP781F(D4-FUNGB,F is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISOLATOR 5KV 1CH TRANS 4-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for TLP781F(D4-FUNGB,F

Description：OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
Number of Channels：1
Voltage - Isolation：5000Vrms
Current Transfer Ratio (Min)：100% @ 5mA
Current Transfer Ratio (Max)：600% @ 5mA
Turn On / Turn Off Time (Typ)：3µs, 3µs
Rise / Fall Time (Typ)：2µs, 3µs
Input Type：DC
Output Type：Transistor
Voltage - Output (Max)：80V
Current - Output / Channel：50mA
Voltage - Forward (Vf) (Typ)：1.15V
Current - DC Forward (If) (Max)：60 mA
Vce Saturation (Max)：400mV
Operating Temperature：-55°C ~ 110°C
Mounting Type：Through Hole
Package / Case：4-DIP (0.400", 10.16mm)
Supplier Device Package：4-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for TLP781F(D4-FUNGB,F

TLP781F(D4-FUNGB,F

Transistor, Photovoltaic Output Optoisolators Overview

The TLP781F(D4-FUNGB,F is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a Gallium Arsenide infrared emitting diode with a silicon phototransistor, providing high isolation voltage of 5000 Vrms minimum. The device features an NPN phototransistor output capable of handling a collector-emitter voltage of 80V and a maximum collector current of 10mA. Typical switching characteristics include a rise time of 2μs and a fall time of 3μs. The component operates within a temperature range of -55°C to +110°C and is housed in a wide lead DIP-4 package.

Transistor, Photovoltaic Output Optoisolators Feature Summary

Integrates a GaAs IRED and silicon phototransistor for optical signal transmission
Provides high electrical isolation with a minimum dielectric strength of 5000 Vrms
Features wide lead spacing in a DIP-4 package for enhanced safety clearance

Transistor, Photovoltaic Output Optoisolators Applications

Solid state relays
Switching power supplies
Signal transmission between different voltage circuits
Various controllers

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix codes against official Toshiba documentation to confirm pin pitch, lead configuration, and compliance certifications. Ensure the ordered variant matches the required thermal and electrical specifications for the target application environment.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high isolation voltage and wide lead spacing are critical for safety standards. Consider the 80V collector-emitter rating and 10mA output current capability. Verify that the operating temperature range meets the system requirements.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the TLP781 series of transistor output optocouplers. It is designed for applications requiring reliable galvanic isolation between control and load circuits. The wide lead option distinguishes it from standard pitch variants, offering improved creepage distances.