TLP785F(BL-TP7,F

Transistor, Photovoltaic Output Optoisolators Overview

The TLP785F(BL-TP7,F is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a Gallium Arsenide (GaAs) infrared emitting diode with an NPN silicon phototransistor within a four-lead plastic DIP package featuring wide lead options for enhanced surface mounting creepage distance. The device provides a minimum isolation voltage of 5000 Vrms and supports a maximum collector-emitter voltage of 80V. Key electrical parameters include a typical forward voltage of 1.3V, a maximum DC forward current of 60mA, and a collector current capacity of 50mA. The unit exhibits a typical rise time of 2µs and fall time of 3µs, operating reliably across a temperature range of -55°C to +110°C.

Transistor, Photovoltaic Output Optoisolators Feature Summary

• High isolation capability with a minimum rated insulation voltage of 5000 Vrms between input and output circuits.
• Wide lead option design facilitates long creepage surface mounting for improved safety in high-voltage applications.
• Utilizes a GaAs infrared LED coupled with a silicon phototransistor for efficient optical signal transmission.
• Fast switching performance characterized by typical rise and fall times of 2µs and 3µs respectively.

Transistor, Photovoltaic Output Optoisolators Applications

• Solid state relays requiring high isolation and reliable switching
• Signal transmission interfaces between circuits operating at different voltage potentials
• Controllers in office equipment and household appliances
• Switching power supplies utilizing opto-isolation for feedback loops

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm lead configuration and packaging type. Ensure the component meets required insulation standards for the target application. Cross-reference datasheet revisions to confirm parameter consistency. Confirm RoHS compliance status through authorized distributors. Validate that the wide lead variant matches the PCB footprint requirements for adequate creepage distance.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high isolation voltage and extended creepage distance are critical for safety compliance. The wide lead DIP package is suitable for applications requiring robust physical separation between high and low voltage sections. Consider the 50mA collector current limit and 80V breakdown voltage for load compatibility. Evaluate the 2µs/3µs switching speeds against signal frequency requirements. Ensure the operating temperature range covers the environmental conditions of the deployment site.

Transistor, Photovoltaic Output Optoisolators Part Context

This device belongs to the TLP785 series of transistor output optocouplers from Toshiba. The series is designed for general-purpose isolation tasks where high reliability and safety are paramount. The TLP785F variant specifically denotes the version with widened leads compared to the standard TLP785, addressing specific PCB layout needs for increased surface clearance without altering the internal optoelectronic characteristics.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may not match the specific wide lead geometry or exact isolation ratings. Verify pinout compatibility and thermal characteristics before integration.