TP65H070LDG

Single FETs, MOSFETs Overview

The TP65H070LDG is a 650V normally-off Gallium Nitride (GaN) FET from Transphorm's SuperGaN platform. It features an on-resistance of 72mΩ and is housed in a PQFN package with a drain tab for thermal management. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include low gate charge, reduced crossover loss, and minimal reverse recovery charge, contributing to higher efficiency compared to silicon alternatives.

Single FETs, MOSFETs Feature Summary

• Top-side heat dissipation via drain tab for flexible thermal management
• Normally-off d-mode GaN technology for enhanced safety
• Low gate charge and output capacitance for reduced switching losses
• High reliability with FIT failure rate below 0.05

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Artificial intelligence power systems
• Renewable energy micro-inverters
• High-performance computing power modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'DG' indicates the drain tab configuration distinct from source tab variants. Confirm active status and lead times through authorized distributors. Ensure ESD protection protocols are followed during handling due to the sensitivity of GaN gate structures. Cross-reference datasheet revisions for any updates to thermal or electrical parameters before final integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and efficient thermal management in surface-mount designs. The drain tab variant suits systems where top-side cooling is preferred over traditional bottom-side heatsinking. Consider its low dynamic resistance and fast switching speeds for high-frequency converters aiming to minimize size and improve overall system efficiency beyond silicon capabilities.

Single FETs, MOSFETs Part Context

This part belongs to Transphorm's Gen III SuperGaN product line, designed to replace silicon MOSFETs and SiC devices. It complements other TOLT and TOLL packaged variants, offering a robust solution for mid-to-high power applications. The technology leverages advanced GaN processes to achieve superior performance metrics while maintaining compatibility with standard manufacturing assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the TP65H070LSG, which shares identical electrical specifications but utilizes a source tab instead of a drain tab for thermal dissipation. Designers must adjust PCB layout and thermal interface strategies when swapping between these two variants to maintain equivalent thermal performance.

Single FETs, MOSFETs FAQ

What is the difference between TP65H070LDG and TP65H070LSG?

Both devices share the same 650V rating and 72mΩ on-resistance. The primary difference is the thermal tab configuration: LDG features a drain tab for top-side cooling, while LSG features a source tab.

Is the TP65H070LDG a normally-on or normally-off device?

It is a normally-off (depletion mode) device, ensuring safe operation without a negative gate voltage required to turn off the transistor.