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TPCC8006-H(TE12LQM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 30V 22A 8TSON. Review the specifications below when checking this part for your BOM.
The TPCC8006-H is a silicon N-channel MOSFET from Toshiba's U-MOS VI-H series, designed for high-efficiency power switching. It features a 30 V drain-source breakdown voltage and supports a continuous DC drain current of 22 A. The device utilizes an SOP Advance (EWF) package to minimize footprint while maintaining robust thermal performance. Key electrical characteristics include a typical low on-resistance of 6.5 mΩ at VGS = 4.5 V and a small gate charge of 7.4 nC, enabling fast switching speeds.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Ensure that the component meets all relevant environmental compliance standards required for your target market before finalizing procurement decisions.
Select this component when designing systems requiring a balance between low conduction losses and rapid switching transitions. The specified gate charge and on-resistance values make it suitable for applications where minimizing switching losses is critical for overall power efficiency.
This part belongs to Toshiba's U-MOS VI-H family of N-channel MOSFETs. These devices are engineered to provide superior performance in terms of switching speed and thermal handling compared to previous generations, targeting modern portable electronics and efficient power conversion topologies.
Consult official Toshiba substitution guides for verified alternatives. Cross-referencing pinouts, voltage ratings, and thermal resistance is essential when considering equivalent parts from other manufacturers.
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