TPH3208LS

Description：GANFET N-CH 650V 20A 3PQFN
Series：-
Mfr：Transphorm
Package：Tube

SKU:1d18b8160763 Category: Single FETs, MOSFETs Brand: Transphorm

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Product introduction

TPH3208LS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Transphorm. Its product description is GANFET N-CH 650V 20A 3PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPH3208LS

Description：GANFET N-CH 650V 20A 3PQFN
Series：-
Mfr：Transphorm
Package：Tube
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id：2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 8 V
Vgs (Max)：±18V
Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-PQFN (8x8)
Package / Case：3-PowerDFN

Single FETs, MOSFETs datasheet and documents for TPH3208LS

TPH3208LS

Single FETs, MOSFETs Overview

The Transphorm TPH3208LS is a normally-off 650V Gallium Nitride (GaN) FET from the PQFN series, featuring an 8x8mm package with source configuration. It exhibits a maximum dynamic on-resistance of 130mΩ and a typical reverse recovery charge of 54nC. The device supports a transient drain-source voltage of 800V and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability
Robust design defined by intrinsic lifetime tests and wide gate safety margins
Very low reverse recovery charge reduces crossover loss
JEDEC qualified GaN technology

Single FETs, MOSFETs Applications

Datacom
Broad industrial
PV inverter
Servo motor

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package orientation matches the specific LSG variant requirements. Ensure thermal management solutions align with the specified junction-to-ambient resistance parameters for reliable operation under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in hard- and soft-switched circuits. The cascode structure allows easy driving with commonly-used gate drivers. Consider the 8x8mm PQFN footprint for space-constrained PCB layouts requiring robust transient over-voltage capability.

Single FETs, MOSFETs Part Context

This part belongs to the TPH3208L Series, which includes both Drain (LDG) and Source (LSG) configurations. The series utilizes a cascode device structure combining GaN and silicon technologies. The datasheet indicates this series is not recommended for new designs as of May 2018.